Mean-field-game model for Botnet defense in Cyber-security

We initiate the analysis of the response of computer owners to various offers of defence systems against a cyber-hacker (for instance, a botnet attack), as a stochastic game of a large number of interacting agents. We introduce a simple mean-field game that models their behavior. It takes into account both the random process of the propagation of the infection (controlled by the botner herder) and the decision making process of customers. Its stationary version turns out to be exactly solvable (but not at all trivial) under an additional natural assumption that the execution time of the decisions of the customers (say, switch on or out the defence system) is much faster that the infection rates

How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies

The present paper is implementing a numerical application of the Boltzmann–Arrhenius–Zhurkov (BAZ) model and relates to the statistic reliability model derived from the Transition State Theory paradigm. It shows how the quantified tool can be applied to determine the associated effective activation energy. The unified multiple stress reliability model for electronic devices is applied to Normally-Off Power GaN transistor technologies to quantify and predict the reliability figures of this electronic type of product when operating under multiple stresses in an embedded system operating under such harsh environment conditions as set for Aerospace, Space, Nuclear, Submarine, Transport or Ground application

M-STORM Reliability model applied to DSM Technologies

Failure mechanisms described in JEDEC publication JEP122G constitute commonly accepted models for silicon device physics of failure. Such models are generally described in term of stress parameters and/or specifically measured drift parameters; however, they consider only a single stress condition, single parameter signature and single failure mechanism at a time. When considering new disruptive technologies for deep submicron integrated circuits, the shrinkage of geometries (down and lower than the 20 nm range) induces shrinkage of electrical parameter limits and condition of use may produce multiple-stress in operation jointly producing multiple failure mechanisms concurrently. This paper is related to the generalized Reliability Model for semiconductor devices called M-STORM for Multi-phySics mulTi-stressOrs predictive Reliability Model